| Comparison between the Performance in Si,Ge and GaAs Photodetector |
| Paper ID : 1091-ICEEM2023 (R1) |
| Authors: |
|
Hagar Saad Marouf *1, El-Sayed El-Rabie2, Khalil ElKhamisy3 1Communication and Electronics, Faculty of Electronic Engineering , Menoufia University 2Department of Electronics and Communications, Faculty of Electronic Engineering, Menoufia University, Egypt 3Department of Communications and Computers Engineering, the Higher Institute of Engineering |
| Abstract: |
| In theory, the groove surface plasmon polaritons (SPPs) launcher that surrounds an unusual Silicon: Si, Germanium, or Gallium Arsenide: GaAs Pin photodetector can be exploited to increase the photocurrent of the detector. Constructive interference is created because of the alteration between the incident light that is Sili from above and the SPPs that are propagating towards the photodetector. The findings of the simulation show that the amount of photocurrent practically doubles when SPPs are included in the system. In the studies presented in this study, comparable experimental pump-probe conditions were utilized in order to compare the ultrafast responses of three different materials: silicon, germanium, and gallium arsenide. When the probe wavelengths are changed, it is known that each of the three materials possesses unique band-energy features, which are expected to influence the recovery dynamics. The three models demonstrate a high current density, but Ge SPP model revealed very high Current density 25 mA/cm2 at 1100nm which was the best of the three simulations. |
| Keywords: |
| Plasmonic Photodetectors · Surface Plasmon Polaritons · Light trapping · Si, Ge and GaAs pin photodetector |
| Status : Paper Accepted |
